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Open Positions

Inductively Coupled Plasma - Chemical Vapour Deposition (ICP-CVD)

Plasma Pro 100, Oxford Instruments
PiQuET Laboratory
The ICP-CVD allows to deposit a large portfolio of high quality films from room temperature to 400°C: Dielectrics (oxides, nitrides, metal oxides), high quality films with low BOE etch rate, refractive Index Control, low Film Stress, very dense films – close to thermal oxide. The gap fill is 2:1 aspect ratio features based on 500 nm width gap. ICP-CVD results in higher density films at low temperatures (<150°C) with respect to PE-CVD. ICP-CVD will give good film qualities at much lower temperatures than PE-CVD
Load-Lock - Software interface - Avoid highly hazardous gases (NH3, H2) - Process Gas Lines (Digital MFCs): SF6, SH4, O2, N2, Ar. - Low damage process for nanometer devices requirement - Isolation/passivation/planarisation - Flexibility for making capacitors and other passive devices after gate level - Lift off capabilities – reducing fabrication cycle time - New advanced plasma Clean
We firmly believe that one of the Group’s strengths lies in the transdisciplinary approach that stems from active collaboration between experts from different fields, crucial for achieving results in both research and technological transfer.
RESEARCH ACTIVITIES