The PlasmaPro 100 Cobra ICP-RIE system uses a high-density inductively coupled plasma at low pressure to achieve fast watch rates. Substrate DC bias is driven by a separate RF generator, allowing independent control of radicals and ions, according to the process requirements. The process modules offer excellent uniformity, high-throughput, high-precision and low-damage processes for wafer size up to 150 mm (6’).
Two electrodes are available for etching: i) a wide temperature range electrode (-150° C to +400° C) which can be cooled by liquid nitrogen, a fluid recirculating chiller or resistively heated. An optional blow out and fluid exchange unit can automate the process of switching modes; ii) A fluid controlled electrode fed by a re‑circulating chiller unit.
The machine is equipped with an automatic endpoint detector (EPD) for achieving optimal process results by means of Optical Emission Spectroscopy. The EPD ensures processes are carefully controlled and consistent for reliable and repeatable results both at the wafer-to-wafer and batch-to-batch level.
Available process gases (fluorine chemistry): SF6, C4F8, CHF3, Ar, O2 - Main etchable materials: High Aspect ratio Si anisotropic etch (Bosh process), anisotropic SiO2 etch, SiNx etch and other dielectric materials, Nb.
