The Chemical Mechanical Polishing (CMP) machine is used for the removal of known quantities of thin films and the planarization of surfaces. The equipment can host up to three different slurries. Several combination slurry-pad can be possible to meet the best condition for different materials.
The applications span several fields, for example the realization of electrical interconnects or integrated photonics through the Damascene process.
Sample sizes: wafer carriers available for 100 mm and 150 mm - Manual loading - Laterally oscillating wafer carrier - Monitoring system equipped with End point detection - Within wafer non-uniformity (WIWNU): typically, less than 5 % sigma/mean - Wafer-to-wafer non-uniformity (WTWNU): typically, less than 5 % - The removal rate varies from few to hundred of nm/min. It depends on the materials, the speeds of rotation, the load pressure, the slurry its concentration and the flow rate.
