The ICP-CVD allows to deposit a large portfolio of high quality films from room temperature to 400°C:
Dielectrics (oxides, nitrides, metal oxides), high quality films with low BOE etch rate, refractive Index Control, low Film Stress, very dense films – close to thermal oxide. The gap fill is 2:1 aspect ratio features based on 500 nm width gap. ICP-CVD results in higher density films at low temperatures (<150°C) with respect to PE-CVD. ICP-CVD will give good film qualities at much lower temperatures than PE-CVD
Load-Lock - Software interface - Avoid highly hazardous gases (NH3, H2) - Process Gas Lines (Digital MFCs): SF6, SH4, O2, N2, Ar. - Low damage process for nanometer devices requirement - Isolation/passivation/planarisation - Flexibility for making capacitors and other passive devices after gate level - Lift off capabilities – reducing fabrication cycle time - New advanced plasma Clean
