This machine can be used for a variety of applicacations: mask fabrication, integrated and diffractive optics, micromechanics and MEMS, maskless direct patterning.
GaN laser source (405 nm, 60 mW) with direct modulation - Autofocus, surface tracking (z stage) and gray-level (256 levels per pixel) patterning capability - XY stages with nanopositioning capability - Maximum substrate dimensions: 150 x 150 mm - Optical resolution (minimum linewidth): 0.8, 2, 4, 8 μm, operator selectable
