Publications

The disproportionate concentration of reactive additives at the surface of UV-cured coatings, Bongiovanni R.; Malucelli G.; Priola A., 1997, SURFACE COATINGS INTERNATIONAL, 80268-+, 10.1007/BF02692666

Synthesis of poly(propylene-glycol-diacrylates) and properties of the photocured networks, Malucelli G.; Gozzelino G.; Ferrero F.; Bongiovanni R.; Priola A., 1997, JOURNAL OF APPLIED POLYMER SCIENCE, 65491-497, 10.1002/(SICI)1097-4628(19970718)65:3<491::AID-APP8>3.0.CO;2-C

Physical properties of boron-nitride and carbon-nitride films deposited by sputtering, Fusco G.; Giorgis F.; Pirri C.F.; Tagliaferro A.; Tresso E.; De Martino C.; Rava P., 1996, 10.4028/www.scientific.net/ddf.134-135.3

Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: A wide band gap material for optoelectronic devices, Demichelis F.; Crovini G.; Giorgis F.; Pirri C.F.; Tresso E., 1996, 10.1063/1.360961

Compositional and structural analysis of hydrogenated amorphous silicon—nitrogen alloys prepared by plasma-enhanced chemical vapour deposition, Demichelis F.; Giorgis F.; Pirri C.F., 1996, 10.1080/01418639608240333

Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixtures, Fathallah M.; Gharbi R.; Crovini G.; Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E.; Rava P., 1996, JOURNAL OF NON-CRYSTALLINE SOLIDS, 200490-494, 10.1016/0022-3093(95)00754-7

Characterization of the effect of growth conditions on a-SiC:H films, Rava P.; Crovini G.; Demichelis F.; Giorgis F.; Pirri C.F., 1996, JOURNAL OF APPLIED PHYSICS, 804116-4123, 10.1063/1.363283

Effects of power density and molecule dwell time on compositional and optoelectronic properties of a-SiC : H alloys, Demichelis F.; Crovini G.; Giorgis F.; Pirri C.F.; Tresso E.; Rigato V.; Coscia U.; Ambrosone G.; Catalanotti S.; Rava P., 1996, 10.1016/0038-1098(95)00832-2

Thermal stability of a-Si1-xCx:H films grown by PECVD with different gas sources, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E., 1996, PHYSICA B-CONDENSED MATTER, 225103-110, 10.1016/0921-4526(96)00227-X

Light induced defects in amorphous silicon-carbon alloys a-SiC:H, Rejeb S.H.; Gharbi R.; Fathallaha M.; Demichelis F.; Pirri C.F.; Tresso E.; Crovini G., 1996, OPTICAL MATERIALS, 613-16, 10.1016/0925-3467(96)00025-0

Photopolymerization of poly(tetramethylene ether) glycol diacrylates and properties of the obtained networks, Malucelli G.; Gozzelino G.; Bongiovanni R.; Priola A., 1996, POLYMER, 372565-2571, 10.1016/0032-3861(96)85373-0

Surface segregation of fluorine-ended monomers, Van Der Grinten M.G.D.; Clough A.S.; Shearmur T.E.; Bongiovanni R.; Priola A., 1996, JOURNAL OF COLLOID AND INTERFACE SCIENCE, 182511-515, 10.1006/jcis.1996.0495

Surface properties of networks containing fluorinated acrylic monomers, Bongiovanni R.; Pollicino N.; Gozzelino G.; Malucelli G.; Priola A.; Ameduri B., 1996, POLYMERS FOR ADVANCED TECHNOLOGIES, 7403-408, 10.1002/(sici)1099-1581(199605)7:5/6<403::aid-pat502>3.0.co;2-0

Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E., 1995, 10.1080/01418619508239944

Effects of hydrogen dilution of silane/methane gas mixtures on growth and structure of a-Si1-xCx:H alloys, Demichelis F.; Giorgis F.; Pirri C.F., 1995, 10.1016/0038-1098(95)00377-0

Comparison between methane and acetylene as carbon sources for C-rich a-SiC: H films, Demichelis F.; Crovini G.; Giorgis F.; Pirri C.F.; Tresso E., 1995, DIAMOND AND RELATED MATERIALS, 4473-477, 10.1016/0925-9635(95)05321-2

Bonding structure and defects in wide band gap a-Si1−xCx:H films deposited in H2diluted SiH4+ CH4gas mixtures, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E., 1995, 10.1080/01418639508243603

Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E.; Galloni R.; Summonte C.; Rizzoli R.; Zignani F.; Rava P., 1995, THIN SOLID FILMS, 265113-118, 10.1016/0040-6090(95)06618-7

Structural and optoelectronic properties of carbon-rich hydrogenated amorphous silicon-carbon films, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E.; Mea G.D.; Rigato V.; Zandolin S., 1995, DIAMOND AND RELATED MATERIALS, 4357-360, 10.1016/0925-9635(94)05308-1

Density of gap states in a-SiC:H films by means of photoconductive and photothermal spectroscopies, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E.; Amato G.; Coscia U., 1995, PHYSICA B-CONDENSED MATTER, 205169-174, 10.1016/0921-4526(94)00233-L

Optimization of relevant deposition parameters for high quality a-SiC:H films, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E.; Galloni R.; Rizzoli R.; Summonte C.; Rava P., 1995, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 37315-321, 10.1016/0927-0248(95)00024-0

X‐ray photoelectron spectroscopic study of poly[4,4′‐isopropylidenebis(1,4‐phenyleneoxyethylene) diacrylate] photocured in the presence of a fluorine containing monomer, Pollicino A.; Siracusa V.; Bongiovanni R.; Priola A., 1995, 10.1002/marc.1995.030161105

Properties of networks based on poly(alkylene glycol) diacrylates, Priola A.; Bongiovanni R.; Gozzelino G.; Ferrero F.; Malucelli G., 1995, MACROMOLECULAR SYMPOSIA, 93195-203, 10.1002/masy.19950930124

Modification of Surface Properties of UV-Cured Films in the Presence of Long Chain Acrylic Monomers, Bongiovanni R.; Malucelli G.; Priola A., 1995, JOURNAL OF COLLOID AND INTERFACE SCIENCE, 171283-287, 10.1006/jcis.1995.1182

Structural and optoelectronic properties of doped microcrystalline silicon carbide films, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E.; Fanclulli M.; Piesarkiewicz T.; Stapinski T., 1994, 10.1088/0268-1242/9/8/017

Optimization of a-Si1-xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E.; Amato G.; Coscia U.; Ambrosone G.; Rava P., 1994, 10.1016/0040-6090(94)90440-5

Thermal modulated esr for the study of defects in a-SiC:H films, Demichelis F.; Giorgis F.; Pirri C.F.; Tresso E.; Ravera L.; Rigato V., 1994, 10.1557/proc-336-535

Deposition and characterization of a-SiC:H thin films, Demichelis F.; Pirn C.F.; Tresso E.; Valente F.; Bolzan E.; Rigato V., 1994, 10.1117/12.192131

Solvent influence on the radical grafting of maleic anhydride on low density polyethylene, Priola A.; Bongiovanni R.; Gozzelino G., 1994, EUROPEAN POLYMER JOURNAL, 301047-1050, 10.1016/0014-3057(94)90197-X

Relations among structural and optoelectronic properties in a-SiC:H films with high C content and high photoconductivity, Leo G.; Galluzzi G.; Guattari G.; Vincenzoni R.; Demichelis F.; Crovini G.; Pirri C.F.; Tresso E., 1993, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1661035-1038, 10.1016/0022-3093(93)91175-3

Electronic density of states in a-SiC:H films, Demichelis F.; Crovini G.; Giorgis F.; Pirri C.F.; Tresso E.; Amato G.; Herremans H.; Grevendonk W.; Rava P., 1993, JOURNAL OF NON-CRYSTALLINE SOLIDS, 1661015-1018, 10.1016/0022-3093(93)91170-8

Mechanical and thermophysical properties of diamond-like carbon (DLC) films with different sp3 sp2 ratios, Demichelis F.; Pirri C.F.; Tagliaferro A.; Benedetto G.; Boarino L.; Spagnolo R.; Dunlop E.; Haupt J.; Gissler W., 1993, DIAMOND AND RELATED MATERIALS, 2890-892, 10.1016/0925-9635(93)90245-W

Investigation on electronic density of states in a-SixC1-x: H films, Demichelis F.; Pirri C.F.; Tresso E.; Herremans H.; Grevendonk W.; Adriaenssens G.J.; Amato G.; Coscia U., 1993, APPLIED SURFACE SCIENCE, 70-1664-668, 10.1016/0169-4332(93)90598-6

Infrared vibrational spectra of hydrogenated amorphous and microcrystalline silicon-carbon alloys a comparison of their structure, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E., 1993, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 68329-340, 10.1080/13642819308215290

Adsorption of organic molecules onto montmorillonite: Cationic surfactants with different polar head group, Bongiovanni R.; Chiarle M.; Pelizzetti E., 1993, JOURNAL OF DISPERSION SCIENCE AND TECHNOLOGY, 14255-268, 10.1080/01932699308943403

Influence of silicon on the physical properties of diamond-like films, Demichelis F.; Pirri C.F.; Tagliaferro A., 1992, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 11313-316, 10.1016/0921-5107(92)90231-W

Evaluation of the [C(sp3)]/[C(sp2)] ratio in diamondlike films through the use of a complex dielectric constant, Demichelis F.; Pirri C.F.; Tagliaferro A., 1992, PHYSICAL REVIEW B, 4514364-14370, 10.1103/PhysRevB.45.14364

Differences in physical properties of hydrogenated and fluorinated amorphous silicon carbide prepared by reactive sputtering, Demichelis F.; Pirri C.F.; Tresso E.; Stapinski T., 1992, JOURNAL OF APPLIED PHYSICS, 715641-5645, 10.1063/1.350496

Comparison of diamond-like carbon films having similar hardness deposited by glow discharge and sputtering, Demichelis F.; Pirri C.F.; Tagliaferro A.; Barbarossa V.; Mercuri S.; Tomaciello R., 1992, DIAMOND AND RELATED MATERIALS, 1535-537, 10.1016/0925-9635(92)90159-L

Microcrystallization formation in silicon carbide thin films, Demichelis F.; Pirri C.F.; Tresso E., 1992, PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 66135-146, 10.1080/13642819208221301

Determination of sp3 sp2 ratio in diamond-like films of a-C:H, Demichelis F.; Pirri C.F.; Tagliaferro A., 1992, DIAMOND AND RELATED MATERIALS, 1298-300, 10.1016/0925-9635(92)90044-O

Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide, Demichelis F.; Pirri C.F.; Tresso E., 1992, JOURNAL OF APPLIED PHYSICS, 721327-1333, 10.1063/1.351742

Differential scanning calorimetry (DSC) studies of hydrogenated amorphous semiconductor alloys, Battezzati L.; Demichelis F.; Pirri C.F.; Tresso E., 1992, 10.1016/0921-4526(92)90599-N

Influence of substrate temperature and annealing treatments on the properties of glow-discharge and sputtered a-Sixc1-x hafilms, Demichelis F.; Pirri C.F.; Tresso E.; Benedetto G., 1991, 10.1080/13642819108205555

Hydrogen diffusion and related defects in hydrogenated amorphous silicon carbide, Demichelis F.; Pirri C.F.; Tresso E.; Rigato V.; DellaMea G., 1991, 10.1016/0022-3093(91)90505-Z

Influence of hydrogen on the evolution of structural properties of amorphous silicon carbide, DellaMea G.; Demichelis F.; Pirri C.F.; Rava P.; Rigato V.; Stapinski T.; Tresso E., 1991, JOURNAL OF NON-CRYSTALLINE SOLIDS, 13795-98, 10.1016/S0022-3093(05)80065-1

Physical properties of undoped and doped hydrogenated amorphous silicon carbide, Demichelis F.; Pirri C.F.; Tresso E.; Della Mea G.; Rigato V.; Rava P., 1991, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 61141-1146, 10.1088/0268-1242/6/12/007

Effects of temperature on structural properties of hydrogenated amorphous silicon-germanium and carbon-silicon-germanium alloys, Battezzati L.; Demichelis F.; Pirri C.F.; Tresso E., 1991, JOURNAL OF APPLIED PHYSICS, 692029-2032, 10.1063/1.348727

The origin of optical absorption and the electron spin resonance signal in amorphous carbon and amorphous hydrogenated carbon: a proposed density-of-states model, Demichelis F.; Pirri C.F.; Tagliaferro A.; Dasgupta D., 1991, SURFACE & COATINGS TECHNOLOGY, 47740-745, 10.1016/0257-8972(91)90347-Y

Hydrogen evolution in amorphous silicon carbide, Demichelis F.; Crovini G.; Pirri C.F.; Tresso E.; Giamello E.; DellaMea G., 1991, PHYSICA B-CONDENSED MATTER, 170149-152, 10.1016/0921-4526(91)90118-X

Perfluorinated surfactants: Properties and applications III. Phase diagrams of four component systems, Bongiovanni R.; Borgarello E.; Carniani C.; Genova C., 1991, COLLOIDS AND SURFACES, 5475-82, 10.1016/0166-6622(91)80050-X

Electron spin resonance and photoacoustic spectroscopy of a-CSi:H and a-SiGe:H alloys, Demichelis F.; Pirri C.F.; Tresso E.; Amato G., 1990, THIN SOLID FILMS, 190351-358, 10.1016/0040-6090(89)90925-5

Spin-resonance spectroscopy of hydrogenated amorphous CSiGe alloys, Demichelis F.; Pirri C.F.; Giamello E., 1990, SOLID STATE COMMUNICATIONS, 74119-122, 10.1016/0038-1098(90)90617-K

Properties of concentrated dispersion of Al(OH)3in caustic solution in the presence of additives., Bongiovanni R.; Castellano M.; Borgarello E., 1990, JOURNAL OF DISPERSION SCIENCE AND TECHNOLOGY, 11169-190, 10.1080/01932699008943247

Perfluorinated surfactants: Properties and applications I. Thermodynamic properties, Fisicaro E.; Pelizzetti E.; Bongiovanni R.; Borgarello E., 1990, COLLOIDS AND SURFACES, 48259-275, 10.1016/0166-6622(90)80233-T

Perfluorinated surfactants: Properties and applications II. Monophasic perfluorinated oil-surfactant-water system, Bongiovanni R.; Borgarello E.; Carlini F.M.; Fisicaro E.; Pellizzetti E., 1990, COLLOIDS AND SURFACES, 48277-283, 10.1016/0166-6622(90)80234-U

Optical and compositional properties of aSi:H/transparent conductive oxide interfaces, Rava P.; Perino M.A.; Pirri C.F.; Galloni R.; Camera A., 1989, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 71318-1321, 10.1116/1.576278

Electron spin-echo modulation of x-doxylstearic acid in nonionic surfactants, Baglioni P.; Bongiovanni R.; Rivara-Minten E.; Kevan L., 1989, JOURNAL OF PHYSICAL CHEMISTRY, 935574-5578, 10.1021/j100351a048

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